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4ns Fast 1n4150 Diode , Switching Signal Diode With High Reliability

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Wuxi Xuyang Electronics Co., Ltd.

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4ns Fast 1n4150 Diode , Switching Signal Diode With High Reliability

Name: 4ns Fast 1n4150 Diode Switching Signal Diode With High Reliability
Brand: XUYANG
Price: 1 USD

China 4ns Fast 1n4150 Diode , Switching Signal Diode With High Reliability wholesale

Brand Name : XUYANG

Model Number : 1N4150

Certification : ISO9001/RoHS

Place of Origin : China

MOQ : 5000pcs

Price : negotiation

Payment Terms : T/T, Western Union

Supply Ability : 100000pcs per 1 week

Delivery Time : 5 - 8 work days

Packaging Details : tape in box, 5000pcs/box

Name : High Speed Switching diode

Part number : 1N4150

VR : 40V

Package : DO-35

Recovery Time : 4ns

Shipping by : DHL\UPS\Fedex\EMS\sea

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1N4150 High Speed Switching Diode 1N4150 50V 200MA With DO-35 Package

Features

1. High reliability
2. High forward current capability

Applications

High speed switch and general purpose use in computer and industrial applications

Construction

Silicon epitaxial planar

Mechanical Data

Case: DO-35, MiniMELF

Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: DO-35 0.13 grams MiniMELF 0.05 grams

Marking: Cathode Band Only

Absolute Maximum Ratings

T_J = 25°C

Parameter	Test Conditions	Symbol	Value	Unit
Repetitive peak reverse voltage		VRRM	50	V
Reverse voltage		VR	40	V
Peak forward surge current	tp≦1 s	IFSM	4	A
Forward current		IF	600	mA
Average forward current	V_R=0	I_FAV	300	mA
Power dissipation		Pv	500	mW
Junction temperature		Tj	175	℃
Storage temperature range		Tstg	-65~+125	℃

Maximum Thermal Resistance

T_J = 25°C

Parameter	Test Conditions	Symbol	Value	Unit
Junction ambient	on PC board 50mm×50mm×1.6mm	RthJA	500	K/W

Electrical Characteristics

T_J = 25°C

Parameter	Test Condition	Symbol	Min	Typ	Max	Unit
Forward Voltage	IF = 1mA	VF	0.54		0.62	V
	IF = 10mA	VF	0.66		0.74	V
	IF = 50mA	VF	0.76		0.86	V
	IF = 100mA	VF	0.82		0.92	V
	IF = 200mA	VF	0.87		1.0	V
Reverse Current	VR = 20V	I_R			100	nA
Reverse Current	VR = 50V, TJ = 150°C	I_R			100	μA
Diode Capacitance	VR = 0, f=1MHz, V_HF-50mV	C_D			2.5	pF
Reverse Recovery Time	IF = I_R= 10…100mA, IR = 1mA, RL = 100Ω	trr			4	ns

Drawing:

Product Tags:

ultra fast switching diode

small signal switching diode

4ns Fast 1n4150 Diode , Switching Signal Diode With High Reliability Images

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